Infineon BSZ065N06LS5: A High-Performance OptiMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon BSZ065N06LS5 stands out as a benchmark in low-voltage power MOSFET technology. As part of Infineon's esteemed OptiMOS™ 5 family, this N-channel MOSFET is engineered to deliver exceptional efficiency and thermal performance in a compact package, making it an ideal choice for a wide array of demanding switching applications.

Engineered on an advanced silicon process, the BSZ065N06LS5 is characterized by its extremely low figure-of-merit (FOM), a critical parameter defined by the product of on-state resistance (RDS(on)) and total gate charge (Qg). With a maximum RDS(on) of just 0.65mΩ at 10V, it minimizes conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. Simultaneously, its optimized gate charge ensures rapid switching speeds and reduced driving losses, which is paramount in high-frequency circuits such as switch-mode power supplies (SMPS) and DC-DC converters.

The device's superior performance is encapsulated in the SuperSO8 package. This innovative packaging technology offers a significantly reduced footprint compared to standard SO-8 packages while providing superior thermal resistance and power dissipation capabilities. This allows designers to push the limits of power density without compromising reliability or thermal management.

Key target applications for the BSZ065N06LS5 include:

Synchronous rectification in server and telecom power supplies.

High-current DC-DC conversion for computing and graphics cards.

Motor control and driving in industrial automation and consumer appliances.

Battery management systems (BMS) and protection circuits.

ICGOO In summary, the Infineon BSZ065N06LS5 OptiMOS™ 5 MOSFET sets a high standard for performance in the 60V segment. Its industry-leading combination of ultra-low RDS(on), fast switching characteristics, and excellent thermal performance in a miniature package empowers engineers to design more efficient, compact, and reliable power systems for the next generation of electronic devices.

Keywords: OptiMOS™ 5, Low RDS(on), High-Efficiency Switching, SuperSO8 Package, Power Density