Infineon IPD053N08N3G: A 80 V, 3 mΩ OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, Infineon Technologies has introduced the IPD053N08N3G, a state-of-the-art N-channel power MOSFET that sets a new benchmark for performance in a compact package. This device is engineered to deliver exceptional efficiency and reliability for a wide array of demanding power conversion applications.

As part of the esteemed OptiMOS™ 5 80 V family, this MOSFET is characterized by its extremely low typical on-state resistance (RDS(on)) of just 3.0 mΩ. This ultra-low resistance is the cornerstone of its performance, directly translating to minimal conduction losses during operation. Whether in a high-current switch or a synchronous rectifier, the reduced power dissipation allows for cooler operation, enhanced system reliability, and the potential for higher output currents without the need for excessive heatsinking.

The benefits extend beyond just raw RDS(on). The OptiMOS 5 technology features superior switching performance, achieved through significantly reduced gate charge (Qg) and output charge (Qoss) figures. This enables faster switching transitions, which is critical for operating at higher frequencies. The ability to switch at higher frequencies allows designers to use smaller passive components like inductors and capacitors, thereby increasing the overall power density of the solution and enabling more compact end-product designs.

Housed in a robust Infineon’s proprietary D2PAK (TO-263) package, the IPD053N08N3G offers an excellent power-to-footprint ratio. This package is renowned for its low thermal resistance, ensuring efficient heat transfer from the silicon die to the PCB. This makes it an ideal choice for space-constrained applications that cannot compromise on thermal performance or current-handling capability.

Typical applications leveraging the strengths of the IPD053N08N3G include:

High-Current DC-DC Converters in telecom and server power supplies.

Synchronous Rectification in switched-mode power supplies (SMPS).

Motor Control and Drives for industrial automation.

Battery Management Systems (BMS) and protection circuits.

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In summary, the Infineon IPD053N08N3G represents a peak in power MOSFET technology, combining an ultra-low 3 mΩ RDS(on) with fast switching characteristics and excellent thermal performance in a D2PAK package. It is a pivotal component for engineers aiming to push the boundaries of efficiency and power density in their next-generation power conversion designs.

Keywords:

1. OptiMOS 5

2. 3 mΩ RDS(on)

3. High-Efficiency

4. Power Density

5. D2PAK Package