Infineon IPB036N12N3GATMA1 OptiMOS 5 Power MOSFET: Key Features and Applications
The Infineon IPB036N12N3GATMA1 is a state-of-the-art power MOSFET from the company's renowned OptiMOS™ 5 family. Engineered with the latest semiconductor technology, this N-channel MOSFET is designed to deliver exceptional efficiency, robustness, and power density for a wide array of demanding power conversion applications. Its advanced features make it a preferred choice for engineers striving to push the boundaries of performance in modern electronic systems.
Key Features
At the heart of this MOSFET's performance is its extremely low figure-of-merit (R DS(on) Q G). The device boasts an ultra-low on-state resistance (R DS(on)) of just 3.6 mΩ at 10 V, which is a critical factor in minimizing conduction losses. This is complemented by a low total gate charge (Q G), which significantly reduces switching losses. The combination of these two parameters ensures that the MOSFET operates with high efficiency, even at high switching frequencies, leading to cooler operation and the potential for smaller heatsinks.
The device is housed in an SuperSO8 (SSO-8) package, which offers an excellent power-to-size ratio. This compact package is designed for low parasitic inductance and features an exposed top-side cooling pad, enabling superior thermal performance by allowing heat to be dissipated directly from the die to an external heatsink. This makes it ideal for space-constrained applications where thermal management is a primary concern.
Furthermore, the MOSFET is characterized by its high robustness and reliability. It offers a high maximum drain-source voltage (V DS) of 120 V, providing a sufficient safety margin for 48 V bus systems commonly found in industrial and automotive environments. It also features a 100% avalanche tested design, ensuring it can withstand stressful operating conditions.
Primary Applications
The superior switching performance and efficiency of the IPB036N12N3GATMA1 make it exceptionally well-suited for a diverse range of applications:
DC-DC Converters: It is a perfect fit for synchronous rectification in high-current, high-frequency switch-mode power supplies (SMPS), telecom bricks, and server power units, where its low R DS(on) directly translates to higher system efficiency.
Motor Control: The device excels in driving brushed and brushless DC motors for industrial automation, robotics, and e-mobility applications such as electric scooters and light electric vehicles, providing smooth control and high power output.
Solar Inverters and Energy Storage Systems: Its high efficiency is crucial for maximizing power harvest in photovoltaic systems and for managing charge/discharge cycles in battery management systems (BMS).
Automotive Systems: While not for safety-critical systems without further qualification, its characteristics are beneficial for 48V mild-hybrid vehicles and other automotive subsystems like battery disconnect switches and LED lighting controllers.
ICGOODFIND Summary
The Infineon IPB036N12N3GATMA1 OptiMOS 5 Power MOSFET stands out as a high-performance solution that masterfully balances ultra-low conduction losses with fast switching capabilities. Its excellent thermal characteristics and high robustness make it an ideal component for enhancing efficiency and power density in modern power electronics, from industrial drives to next-generation automotive and renewable energy systems.
Keywords:
1. Efficiency
2. Low R DS(on)
3. OptiMOS 5
4. Synchronous Rectification
5. Thermal Performance
