Infineon IPW90R120C3: A High-Performance 900V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPW90R120C3 stands out as a premier solution, a 900V CoolMOS™ Power Transistor engineered to meet these challenges in demanding switching applications.

This device leverages Infineon's advanced superjunction (SJ) technology, which is the foundation of the CoolMOS™ family. This technology enables a significant reduction in on-state resistance (RDS(on)) for a given silicon area. The IPW90R120C3 boasts an exceptionally low RDS(on) of 120 mΩ, which directly translates to minimized conduction losses. When combined with outstanding switching characteristics, it ensures high efficiency across a wide operating range, making it ideal for systems where energy savings and thermal management are paramount.

A key feature of this transistor is its high voltage rating of 900V. This provides a robust safety margin, enhancing system reliability in environments with volatile line voltages or high-energy switching spikes, such as in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and lighting ballasts. The high voltage capability also allows for designs that can accommodate global mains voltages with ease.

Furthermore, the IPW90R120C3 is designed for fast and robust switching. It features low gate charge (Qg) and low effective output capacitance (Coss(eff)). These parameters are crucial for achieving high switching frequencies, which in turn allows for the use of smaller passive components like inductors and transformers. This is a vital step towards increasing the overall power density of the end product, enabling more compact and lighter designs without sacrificing performance.

The transistor also offers excellent reverse recovery characteristics for the intrinsic body diode, contributing to reduced switching losses in hard-switching topologies. Its high durability and avalanche ruggedness ensure long-term operational stability even under stressful conditions.

ICGOOODFIND: The Infineon IPW90R120C3 is a high-efficiency, high-voltage champion. Its standout combination of an ultra-low 120 mΩ RDS(on), a 900V breakdown voltage, and superior switching dynamics makes it an exceptional choice for designers aiming to push the boundaries of efficiency and power density in AC-DC converters, industrial drives, and renewable energy systems.

Keywords:

CoolMOS™

900V

Low RDS(on)

High Efficiency

Switching Applications