Infineon BGA7H1N6E6327 Low-Noise Amplifier for High-Frequency Applications

Release date:2025-11-05 Number of clicks:81

Infineon BGA7H1N6E6327 Low-Noise Amplifier for High-Frequency Applications

The Infineon BGA7H1N6E6327 is a state-of-the-art silicon germanium (SiGe) low-noise amplifier (LNA) designed to meet the demanding requirements of modern high-frequency wireless systems. Operating within a broad frequency range from 800 MHz to 6 GHz, this component is exceptionally versatile, making it an ideal solution for a vast array of applications, including cellular infrastructure (4G/LTE, 5G NR), IoT connectivity, GPS, and satellite communication systems.

A defining characteristic of the BGA7H1N6E6327 is its ultra-low noise figure of just 0.6 dB at 1.9 GHz. This exceptional performance is critical for applications where signal integrity is paramount. By introducing minimal additional noise, the LNA ensures that weak incoming signals are amplified cleanly, thereby significantly improving the overall sensitivity and reception quality of the receiver chain. This allows for more reliable data links and extended range in communication systems.

Beyond its noise performance, the amplifier delivers high gain, up to 20.5 dB, which helps to overpower the noise contributions from subsequent stages in the RF signal path. Despite its high performance, the device is engineered for remarkably low power consumption, aligning with the energy efficiency goals of contemporary portable and battery-operated devices. Its small and robust CSP (Chip Scale Package) not only saves valuable PCB space but also ensures reliable operation under various environmental conditions, making it suitable for compact and high-density designs.

Integration is simplified thanks to the device’s internal matching networks, which require only a minimal number of external components for operation. This feature reduces both design complexity and board space, accelerating time-to-market for product developers.

ICGOOODFIND: The Infineon BGA7H1N6E6327 stands out as a superior high-frequency LNA, masterfully balancing ultra-low noise, high gain, and excellent linearity in an energy-efficient and miniaturized package. It is a cornerstone component for designers aiming to push the performance boundaries of their next-generation wireless products.

Keywords:

Low-Noise Amplifier (LNA)

High-Frequency

Silicon Germanium (SiGe)

Noise Figure

5G

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