Infineon IPA90R500C3 CoolMOS™ PFD7 Power Transistor: Datasheet, Application Notes, and Technical Specifications

The Infineon IPA90R500C3 stands as a premier representative of the latest CoolMOS™ PFD7 series, engineered to deliver exceptional efficiency and power density in high-performance switched-mode power supplies (SMPS). This 900V superjunction MOSFET is specifically designed to meet the rigorous demands of industrial, server, telecom, and lighting applications, pushing the boundaries of what is possible in power conversion technology.

Technical Specifications and Key Features

At its core, the IPA90R500C3 is built on Infineon's advanced superjunction (SJ) technology. This technology is the cornerstone of its performance, enabling a remarkable reduction in both on-state resistance (RDS(on)) and switching losses. The device boasts an ultra-low RDS(on) of just 500mΩ (max) at 25°C, which directly translates to lower conduction losses and higher overall system efficiency.

A pivotal feature of the PFD7 series is the integrated fast body diode. This characteristic is crucial for hard-switching topologies like power factor correction (PFC) stages, as it ensures superior reverse recovery performance (Qrr). This minimizes switching losses associated with the diode's commutation and enhances the reliability of the entire system, allowing for higher switching frequencies.

Other critical specifications from its datasheet include:

High Voltage Rating: 900V drain-source voltage (VDS) offers a comfortable safety margin for 400V mains applications and provides robustness against voltage spikes.

Low Gate Charge (Qg): With a typical total gate charge of 24nC, the MOSFET is easy to drive, reducing driving losses and simplifying gate driver design.

Avalanche Ruggedness: The device is designed to withstand a certain amount of unclamped inductive switching (UIS) energy, ensuring durability in harsh operating environments.

Primary Applications and Usage Notes

The IPA90R500C3 is ideally suited for a wide range of high-power applications. Key application areas include:

Power Factor Correction (PFC): Its high voltage rating and excellent diode performance make it a top choice for both interleaved and single-phase boost PFC circuits in server and telecom power supplies.

Switch-Mode Power Supplies (SMPS): It is perfect for high-efficiency LLC resonant converters and active clamp flyback (ACF) topologies used in computing and industrial power systems.

Lighting: The transistor is used in high-end industrial and commercial lighting drivers.

When designing with this MOSFET, several application notes are critical for success:

1. Gate Driving: Although it features a standard threshold voltage, a properly designed gate driver with low parasitic inductance is essential to minimize switching overshoot and ringing. A gate-source resistor is often recommended to dampen oscillations.

2. Thermal Management: Despite its high efficiency, effective heat sinking is mandatory. The low thermal resistance from junction to case (RthJC) allows heat to be efficiently transferred to the heatsink, but proper mounting is key to maximizing power handling.

3. Layout Considerations: A low-inductance layout for the power loop and gate drive loop is non-negotiable. This involves using short, wide traces and strategically placing decoupling capacitors to suppress voltage spikes and ensure stable operation.

ICGOODFIND Summary

The Infineon IPA90R500C3 CoolMOS™ PFD7 is a state-of-the-art power transistor that sets a new benchmark for efficiency and power density in high-voltage applications. Its combination of an ultra-low RDS(on), an integrated fast body diode, and high avalanche ruggedness makes it an superior choice for designers aiming to create compact, reliable, and highly efficient power supplies for demanding markets.

Keywords:

CoolMOS™ PFD7

Superjunction MOSFET

RDS(on)

Fast Body Diode

Power Factor Correction (PFC)