Infineon IPP65R310CFD: High-Performance Superjunction MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor components. At the heart of many advanced switch-mode power supplies (SMPS), industrial motor drives, and renewable energy inverters lies the power MOSFET. The Infineon IPP65R310CFD stands out as a premier superjunction (SJ) MOSFET engineered to meet these stringent requirements, delivering exceptional performance through its innovative design and superior material technology.
This device is part of Infineon's renowned CoolMOS™ CFD7 family, which represents the seventh generation of superjunction technology. The IPP65R310CFD is specifically optimized for high-frequency operation in applications like server and telecom power supplies, where switching losses are a primary concern. With a rated voltage of 650 V and a low typical on-state resistance (R DS(on)) of just 310 mΩ, it achieves an excellent balance between conduction losses and switching performance. This low R DS(on) is crucial for minimizing heat generation during operation, leading to cooler running systems and reduced need for large heat sinks.
A key differentiator of the CFD7 series is the integration of a fast body diode. Traditional SJ MOSFETs can suffer from poor reverse recovery characteristics, which lead to significant switching losses and electromagnetic interference (EMI) in bridge topologies. The integrated fast body diode drastically reduces reverse recovery charge (Q rr). This feature not only enhances hard-switching efficiency but also improves reliability, making the device exceptionally robust in power factor correction (PFC) and half-bridge/ full-bridge circuits.
Furthermore, the IPP65R310CFD offers superb switching behavior with low gate charge (Q G) and low output capacitance (C OSS). These parameters are vital for achieving high switching speeds, which allows power supply designers to increase the operating frequency. A higher switching frequency, in turn, enables the use of smaller passive components like transformers and inductors, directly contributing to higher power density and a more compact system footprint.
The package itself, the TO-220 FullPAK, provides a double-sided cooling capability. This means the package is isolated, allowing a heatsink to be attached to both the front and back, significantly improving thermal management and enabling higher power throughput in a given form factor.
ICGOOODFIND: The Infineon IPP65R310CFD is a top-tier superjunction MOSFET that sets a high benchmark for efficiency and reliability in high-power conversion systems. Its combination of extremely low on-state resistance, an integrated fast body diode for reduced switching losses, and excellent thermal performance makes it an ideal choice for designers aiming to push the limits of power density and energy efficiency in next-generation computing, industrial, and renewable energy applications.
Keywords: Superjunction MOSFET, High-Frequency Switching, Efficient Power Conversion, Low On-State Resistance, Fast Body Diode.
