Infineon BSC016N03MSG 30V N-Channel MOSFET Datasheet and Application Overview
The Infineon BSC016N03MSG is a state-of-the-art N-Channel MOSFET fabricated using Infineon’s advanced OptiMOS™ power technology. Designed for a maximum drain-source voltage (VDS) of 30V, this MOSFET is engineered to deliver exceptional efficiency and reliability in a compact package, making it an ideal choice for a wide range of low-voltage, high-performance switching applications.
A standout feature of this device is its extremely low on-state resistance (RDS(on)) of just 1.6 mΩ (max. at VGS = 10V). This minimal resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency, reduced heat generation, and improved thermal performance in end applications. The device is housed in a SuperSO8 (PG-TDSON-8) package, which offers an excellent footprint-to-performance ratio, enabling high power density in space-constrained designs.
The BSC016N03MSG is characterized by its high current handling capability, supporting a continuous drain current (ID) of up to 130 A at a case temperature of 25°C. Furthermore, it boasts a low gate charge (QG) and figures of merit like RDS(on) QG, which are optimized for high-frequency switching. This allows for faster switching speeds and reduced driver losses, which is paramount in modern switch-mode power supplies and motor control circuits.
Key Applications:
Synchronous Rectification in switched-mode power supplies (SMPS) for servers, telecom, and computing.
DC-DC Converters in point-of-load (POL) modules and voltage regulator modules (VRMs).
Motor Control and Drive Circuits for robotics, drones, and automotive systems.
Battery Management Systems (BMS) including protection circuits and load switches.
High-Current Switching in power tools and industrial equipment.
From the datasheet, designers should pay close attention to the Safe Operating Area (SOA) graphs, the thermal resistance (RthJC) of 0.5 K/W, and the gate-source voltage range. Proper PCB layout is critical to realizing the full performance of this MOSFET; a low-inductance layout with adequate thermal management, including a well-designed copper pad for heat dissipation, is highly recommended.
ICGOOODFIND: The Infineon BSC016N03MSG stands out as a superior component for designers seeking to maximize efficiency and power density in low-voltage applications. Its industry-leading RDS(on) in the SuperSO8 package provides a compelling solution for reducing energy losses and simplifying thermal design, making it a go-to MOSFET for next-generation power systems.
Keywords: OptiMOS™, Low RDS(on), Synchronous Rectification, Power Density, SuperSO8
