Infineon IPZ40N04S5L-4R8: 40V OptiMOS 5 Power MOSFET with 8mΩ RDS(on)

In the pursuit of higher efficiency and power density in modern electronic systems, the choice of power switching components is paramount. The Infineon IPZ40N04S5L-4R8 stands out as a premier solution, representing the cutting edge of low-voltage power MOSFET technology. As part of Infineon's esteemed OptiMOS™ 5 40V family, this device is engineered to deliver exceptional performance in a compact form factor, making it an ideal choice for a wide array of demanding applications.

The most striking feature of this MOSFET is its extremely low typical on-state resistance (RDS(on)) of just 0.8 mΩ. This ultra-low resistance is a key determinant of efficiency, as it directly minimizes conduction losses. When the MOSFET is switched on, less energy is wasted as heat, leading to cooler operation and significantly higher overall system efficiency. This characteristic is crucial for battery-powered devices, where every watt saved translates directly into extended runtimes, and for high-current scenarios like motor control, where reducing heat generation is a primary design challenge.

Beyond its impressive RDS(on), the IPZ40N04S5L-4R8 excels in switching performance. The OptiMOS™ 5 technology platform ensures excellent figure-of-merit (FOM), which balances low gate charge (Qg) and low RDS(on). This results in faster switching speeds and reduced switching losses, allowing systems to operate at higher frequencies without a punitive efficiency penalty. Designers can thus leverage this to make power supplies and converters smaller by using fewer peripheral components like inductors and capacitors.

Housed in an advanced, space-saving Infineon PG-TSON-8-10 (SuperSO8) package, this MOSFET offers superior power density. The package boasts an extremely low parasitic inductance and an efficient thermal design, enabling better heat dissipation from the die to the PCB. This allows the component to handle high continuous and pulsed currents (Id = 300 A @ 100°C) reliably, even in environments with limited airflow.

The combination of low losses, high switching speed, and robust thermal performance makes the IPZ40N04S5L-4R8 exceptionally versatile. It is perfectly suited for a broad spectrum of applications, including:

Synchronous Rectification in SMPS: Especially in server and telecom power supplies.

Motor Drive and Control: For industrial brushesless DC (BLDC) motors, drones, and power tools.

Battery Management Systems (BMS): Such as in high-current discharge protection switches.

OR-ing and Hot-Swap Solutions: In enterprise computing and networking equipment.

ICGOODFIND: The Infineon IPZ40N04S5L-4R8 is a benchmark in power MOSFET design, offering a near-perfect synergy of minimal conduction losses, superior switching performance, and outstanding thermal characteristics in a miniature package. It empowers engineers to push the boundaries of efficiency and power density in next-generation electronic designs.

Keywords: OptiMOS 5, Low RDS(on), Power Efficiency, High Power Density, Synchronous Rectification.